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 CT40KM-8H
Nch IGBT for Strobe Flasher
REJ03G0286-0100 Product under development Rev.1.00 Aug.20.2004
Features
* VCES : 400 V * TO-220FN package * High Speed Switching
Outline
TO-220FN
2
1
1 : Gate 2 : Collector 3 : Emitter
1
23
3
Applications
Strobe flashers
Maximum Ratings
(Tc = 25C)
Parameter Collector-emitter voltage Gate-emitter voltage Symbol VCES VGES Ratings 400 30 Unit V V Conditions VGE = 0 V VCE = 0 V, Refer to item 4 under Notes on the Actual Specifications VCE = 0 V, tw = 0.5 s CM = 1500 F (see performance curve)
Peak gate-emitter voltage Collector current (Pulse) Maximum power dissipation Junction temperature Storage temperature Mass
VGEM ICM PC Tj Tstg --
40 200 45 - 40 to +150 - 40 to +150 2.0
V A W C C g
Typical value
Rev.1.00, Aug.20.2004, page 1 of 4
CT40KM-8H
Electrical Characteristics
(Tj = 25C)
Parameter Collector-emitter breakdown voltage Collector-emitter leakage current Gate-emitter leakage current Gate-emitter threshold voltage Symbol V(BR)CES ICES IGES VGE(th) Min. 450 -- -- -- Typ. -- -- -- -- Max. -- 10 0.1 7.0 Unit V A A V Test conditions IC = 1 mA, VGE = 0 V VCE = 400 V, VGE = 0 V VGE = 40 V, VCE = 0 V VCE = 10 V, IC = 1 mA
Performance Curves
Maximum Pulse Collector Current
200
Pulse Collector Current ICM (A)
CM
F
160 RG = 30
120
80
40
0
0
10
20
30
40
50
Gate-Emitter Voltage VGE (V)
Rev.1.00, Aug.20.2004, page 2 of 4
CT40KM-8H
Application Example
IXe CM + -
Vtrig
Trigger Signal VCM
Vtrig
RG VCE VG IGBT IGBT Gate Voltage VG
Xe Tube Current IXe Recommended Operation Conditions 330 V 180 A 1200 F 28 V Maximum Operation Conditions 350 V 200 A 1500 F --
VCM ICP CM VGE
Precautions on Usage
1. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And peak reverse gate current during turn-off must become less than 1 A. (In general, when RG(off) = 30 , it is satisfied.) 2. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully to protect the device from electrostatic charge. 3. The operation life should be endured 5,000 shots under the charge current (IXe 200 A : full luminescence condition) of main capacitor (CM = 1500 F) which can endure repeated discharge of 5,000 times. Repetition period under full luminescence condition is over 3 seconds. 4. Total operation hours applied to the gate-emitter voltage must be within 5,000 hours.
Rev.1.00, Aug.20.2004, page 3 of 4
CT40KM-8H
Package Dimensions
TO-220FN
EIAJ Package Code JEDEC Code Mass (g) (reference value)
2.0
Lead Material
Cu alloy
10 0.3
2.8 0.2
15 0.3
3 0.3
3.2 0.2
14 0.5
3.6 0.3
1.1 0.2 1.1 0.2 0.75 0.15
6.5 0.3
0.75 0.15
2.54 0.25
2.54 0.25
4.5 0.2
Symbol A A1 A2 b D E e x y y1 ZD ZE
Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified.
Order Code
Lead form Standard packing Quantity Standard order code Standard order code example CT40KM-8H
Straight type Plastic Magazine (Tube) 50 Type name Note : Please confirm the specification about the shipping in detail.
Rev.1.00, Aug.20.2004, page 4 of 4
2.6 0.2
Dimension in Millimeters Min Typ Max
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
RENESAS SALES OFFICES
Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500 Fax: <1> (408) 382-7501 Renesas Technology Europe Limited. Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, United Kingdom Tel: <44> (1628) 585 100, Fax: <44> (1628) 585 900 Renesas Technology Europe GmbH Dornacher Str. 3, D-85622 Feldkirchen, Germany Tel: <49> (89) 380 70 0, Fax: <49> (89) 929 30 11 Renesas Technology Hong Kong Ltd. 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2375-6836 Renesas Technology Taiwan Co., Ltd. FL 10, #99, Fu-Hsing N. Rd., Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. 26/F., Ruijin Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1, Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001
http://www.renesas.com
(c) 2004. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .1.0


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